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| DDTB (LO-R1) U PNP PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR SPICE MODELS: DDTB122LU DDTB142JU DDTB122TU DDTB142TU Features NEW PRODUCT * * * * Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors Lead Free Product 2 A 3 OUT SOT-323 Dim BC Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0 Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8 A B C D M IN G H 1 GND Mechanical Data * * * * * * * * Case: SOT-323, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Finish - Matte Tin (Note 1) Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: Date Code and Marking Code (See Diagrams & Page 2) Weight: 0.006 grams (approx.) Ordering Information (See Page 2) P/N DDTB122LU DDTB142JU DDTB122TU DDTB142TU R1 (NOM) R2 (NOM) MARKING 0.22KW 0.47KW 0.22KW 0.47KW 10KW 10KW OPEN OPEN P75 P76 P77 P78 K 0.65 Nominal E G H J K L M a J D E L R1 (2) IN R2 OUT (3) All Dimensions in mm GND (1) Maximum Ratings Supply Voltage, (3) to (1) Input Voltage, (2) to (1) Input Voltage, (1) to (2) Output Current Power Dissipation (Note 2) @ TA = 25C unless otherwise specified Symbol VCC DDTB122LU DDTB142JU DDTB122TU DDTB142TU All VIN VEBO (MAX) IC Pd RqJA Tj, TSTG Value -50 +5 to -6 +5 to -6 -5 -500 200 625 -55 to +150 Unit V V V mA mW C/W C Characteristic Thermal Resistance, Junction to Ambient Air (Note 2) Operating and Storage and Temperature Range Note: 1. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability and minimum order details. 2. Mounted on FR4 PC Board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. DS30400 Rev. 2 - 2 1 of 3 www.diodes.com DDTB (LO-R1) U a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol Min -0.3 -0.3 3/4 3/4 3/4 3/4 56 56 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 200 Max 3/4 -2.0 -2.0 -0.3V -28 -13 -0.5 3/4 3/4 R1, R2 Types Unit V V V mA mA 3/4 MHz Test Condition VCC = -5V, IO = -100mA VO = -0.3V, IO = -20mA VO = -0.3V, IO = -20mA IO/Il = -50mA/-2.5mA VI = -5V VCC = -50V, VI = 0V VO = -5V, IO = -50mA VCE = -10V, IE = -5mA, f = 100MHz NEW PRODUCT Characteristic Input Voltage DDTB122LU DDTB142JU DDTB122LU DDTB142JU Output Voltage Input Current Output Current DC Current Gain Gain-Bandwidth Product* * Transistor - For Reference Only DDTB122LU DDTB142JU DDTB122LU DDTB142JU Vl(off) Vl(on) VO(on) Il IO(off) Gl fT Electrical Characteristics Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current @ TA = 25C unless otherwise specified Symbol BVCBO BVCEO BVEBO ICBO Min -50 -40 -5 3/4 3/4 3/4 3/4 100 100 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 250 250 200 Max 3/4 3/4 3/4 -0.5 -0.5 -0.5 -0.3 600 600 3/4 R1-Only Types Unit V V V mA mA V 3/4 MHz IC = -1mA IE = -50mA IE = -50mA VCB = -50V VEB = -4V IC = -50mA, IB = -2.5mA IC = -5mA, VCE = -5V VCE = -10V, IE = 5mA, f = 100MHz Test Condition IC = -50mA DDTB122TU DDTB142TU DDTB122TU DDTB142TU DDTB122TU DDTB142TU IEBO VCE(sat) hFE fT Collector-Emitter Saturation Voltage DC Current Transfer Ratio Gain-Bandwidth Product* * Transistor - For Reference Only Ordering Information (Note 3) Device DDTB122LU-7 DDTB142JU-7 DDTB122TU-7 DDTB142TU-7 Packaging SOT-323 SOT-323 SOT-323 SOT-323 Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel Notes: 1. If lead-bearing terminal plating is required, please contact your Diodes Inc. sales representative for availability and minimum order details. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXX = Product Type Marking Code See Sheet 1 Diagrams YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September XXX Date Code Key Year Code Month Code Jan 1 2002 N Feb 2 2003 P March 3 YM 2004 R Apr 4 2005 S May 5 Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30400 Rev. 2 - 2 2 of 3 www.diodes.com DDTB (LO-R1) U 250 Pd, POWER DISSIPATION (mW) NEW PRODUCT 200 150 100 50 0 -50 0 50 100 150 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve DS30400 Rev. 2 - 2 3 of 3 www.diodes.com DDTB (LO-R1) U |
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